Reactive Ion Etching Vacuum System with Load Lock PLASMA TM 7 for Efficient Layer Processing

Working surface of the table-HF electrode Ø 150 mm;
Sluice chamber for loading - unloading of wafers Ø 75, 100, 150 mm from cassette to cassette;
Transport system for substrates transfer from the lock chamber to the working chamber on the basis of manipulator;
Measurement of RF displacement on RF electrode - substrate holder from 0 to 1000 V;
Regulation and automatic maintenance of the RF electrode - substrate holder power level in the range of 30-200 W;
Working gases: Ar, SF6, O2, CF4;
Forvacuum pumping system;
Microprocessor control system;
Consumption power not more than 3 kW;
Area occupied by one unit ~ 2,5 m2.