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Powerful GaN-Based Microwave Transistor PP9170V for Amplifier Applications
Manufacturer:
NIIET OJSC
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Description
Powerful microwave transistor on the basis of gallium nitride for application in amplifying stages, L-, S- frequency ranges. Due to small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.
Specifications
Frequency
3.1
Chip weight
5 year
Output power
150 W
Maximum voltage
150 V
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