High Voltage Bipolar Power Transistor for Key Amplifying Devices - 2T8143U
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High Voltage Bipolar Power Transistor 2T8143UAvailable for Import

High Voltage Bipolar Power Transistor 2T8143U for High-Power Applications

High-Power Transistors
Manufacturer:NPP Iskra OJSC
Price:Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Available Models

High-voltage bipolar high-current transistors 2T8143T1High-power NPN special-purpose switching transistors 2T879AHigh-power NPN special-purpose switching transistors 2T879BHigh-voltage bipolar high-current transistors 2T8143SHigh-voltage bipolar high-current transistors 2T8143T

Description

Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment

Specifications

Collector-emitter boundary voltage
180 V
Collector-emitter saturation voltage
0.8 V
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