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High-Voltage Bipolar Power Transistors 2T8143F1 for Switching Applications
Manufacturer:
NPP Iskra OJSC
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Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
240 V
Collector-emitter saturation voltage
0.8 V
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