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Powerful GaN-based Microwave Transistor PP9139B1 for Amplification Applications
Manufacturer:
NIIET OJSC
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Description
Powerful microwave transistor on the basis of gallium nitride for application in amplifying stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers
Specifications
EFFICIENCY
SBVVBG %
Output power
100 W
Maximum voltage
130 V
Transistor weight
5 year
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