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High-voltage bipolar high-current transistors 2T8143F

High-Power Transistors

Manufacturer: NPP Iskra OJSC

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Bulk pricing available

FOB, CIF & EXW terms available

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Available Models

High Voltage Bipolar Power Transistor 2T8143U High-voltage bipolar high-current transistors 2T8143T1 High-power NPN special-purpose switching transistors 2T879A High-power NPN special-purpose switching transistors 2T879B High-voltage bipolar high-current transistors 2T8143S

High-voltage bipolar high-current transistors 2T8143T High voltage bipolar high current transistors 2T8143U1 High-voltage bipolar high-current transistors 2?8143?1

Description

Powerful high-voltage silicon epitaxial-planar n-p-n switching transistors in ceramic-metal package, designed for operation in high-power key amplifier devices and other special-purpose equipment

Specifications

Decline time

0.4

Resorption time

2.1

Shutdown time

2.5

Boundary voltage

240 V

Base-emitter saturation voltage

2 V

Collector-emitter saturation voltage

0.8 V

Emitter reverse current

0.35 A

Collector-emitter reverse current

0.005 A

Collector reverse current

0.005 A

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Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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High-voltage bipolar high-current transistors 2T8143F

Available Models

Description

Specifications

Share your requirements for a quick response!