Available for Import
High-power NPN special-purpose switching transistors
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power switch transistors in metal-ceramic package designed for use in high-power key devices and other special-purpose equipment.
Specifications
Collector reverse current
0.003 A
Emitter reverse current
0.01 A
Boundary voltage
200 V
Collector-emitter saturation voltage
2 V
Base-emitter saturation voltage
1.8 V
Secondary breakdown energy
100
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
N-Channel MOSFET Transistor An10N70S10
View DetailsN-Channel MOSFET Transistor AnS140N06
View DetailsSilicon N-P-N Switching Transistor KT908A
View DetailsPowerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsTransistor Optocoupler AOT110B with Local Gold-Plated Pins
View DetailsHigh-Power DMOS Transistors 2P7242A-4
View DetailsHigh-Voltage NPN Silicon Switching Transistor KT8155G
View DetailsHigh-Power IGBT Module AnM150HBEВ12M
View DetailsHigh-Power High-Voltage Field Transistor KP829B9
View DetailsHigh Voltage Bipolar Power Transistors 2T8144BM1
View DetailsHigh Voltage Field Transistor KP829A9
View DetailsPower Keys K1376KI014 - High Performance Switches
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions