Available for Import
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J for Secondary Power Sources
Manufacturer:
NPP Iskra OJSC
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FOB, CIF & EXW terms available
Description
Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.
Specifications
Initial drain current
0.0005 A
Gate leakage current
1.0E-7 A
Drain-to-source resistance in open state
0.003 ohm
Threshold voltage
2...4 V
Switch-on delay time
80
Rise time
80
Shutdown delay time
One link up to 16GB 64-bit DDR4-2400 MHz with ECC support; 16GB (for CPC1309-01); 8GB (for CPC1309-02)
Decline time
60
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