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Powerful Linear LDMOS Transistor KP9171BS for Class AB Amplifiers
Manufacturer:
NIIET OJSC
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Description
KP9171BS - silicon epitaxial-planar field n-channel n-channel insulated gate high-power microwave linear LDMOS transistor . It is intended for operation in power amplifiers in class AB mode in a common-source circuit at frequencies up to 860 MHz.
Specifications
Weight
18 year
Output power
180 W
Power gain
18.6
Effluent efficiency
SBVVBG %
Initial drain current, mA
10
Gate leakage current, mA
0.15
Increased operating temperature of the enclosure
125 °C
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