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Powerful microwave gallium nitride transistor KP9169AS
Manufacturer:
NIIET OJSC
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Description
Powerful microwave transistor on the basis of gallium nitride for application in amplifying stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers
Specifications
Frequency range
1200...1400
Maximum operating temperature
125 °C
Transistor weight
18 year
Output power
250 W
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