Available for Import
Power IGBT module AnM150HBB12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM150HBB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
150 A
Recovery time
200
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Power Keys K1376KI014 - High Performance Switches
View DetailsHigh Voltage Field Transistor KP829A9
View DetailsSpecial Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View DetailsPowerful Silicon High Voltage N-Channel DMOS Transistors and Modules 2P829G
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View DetailsHigh-Power DMOS Transistors 2P7242A-4
View DetailsPower IGBT Module AnM600SSC12M
View DetailsPower Module AnS150FRD065 for Industrial Applications
View DetailsSilicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View DetailsWave Running Light "Lotoshnik
View DetailsPowerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View DetailsPower IGBT Module AnM100RCA065M
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions