Special Resistant SOZU 1MB 1665РУ1У Memory Module for Reliable Data Storage

Integrated electronic circuits

128Kx8 digit capacity, CMOS technology 0.24 µm CED, Supply voltage 3.3V ± 10%, Read/write cycle, not less than 35 ns / 50 ns, Sampling time, not more than 35 ns, Current consumption in storage mode, not more than 5 mA, Dynamic current consumption, not more pcs