Available for ImportP-N-P Silicon Transistor KT234V9 for Amplification and Switching Applications
Manufacturer:KREMNIY EL OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Designed for operation in switching, amplifying circuits, circuits of generation of high-frequency oscillations and other radio-electronic equipment of industrial and technical purpose
Specifications
Boundary voltage
Not less than 45 V
Maximum permissible DC collector-to-base voltage
Not more than 50 V
Base-emitter saturation voltage
Not more than 1.0 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Power Module AnS150FRD065 for Industrial Applications
View Details
High-Power High-Voltage Field Transistor KP829Zh
View Details
Specialized Thyristor Optocouplers 3OU186A
View Details
AnDM100AD17M Power Module - Efficient Power Management
View Details
N-channel MOSFET Transistor AnU12N10L
View Details
Powerful GaN-Based Microwave Transistor PP9170V
View Details
Powerful GaN Microwave Transistor for Amplification PP9137A
View Details
Special Purpose Transistor Optocouplers 3OT127V
View Details
Powerful N-Channel DMOP Transistors 2P7246A91
View Details
Powerful GaN-based Microwave Transistor PP9170D
View Details
Silicon Epitaxial-Planar Microwave Transistor KT6131A
View Details
Powerful NPN Transistor 2T808A for Special Applications
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions