Available for Import
High-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
Manufacturer:
NIIET OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Powerful microwave transistor based on gallium nitride for use in amplifier stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.
Specifications
EFFICIENCY
SBVVBG %
Output power
SBVVBG W
Maximum voltage
130 V
Transistor weight
5 year
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power GaN Microwave Transistors PП9136A
View Details
Powerful NPN Switching Transistors for Special Applications 2T856G
View Details
High Voltage Powerful N-Channel DMOS Transistor KP7154BS
View Details
Power IGBT Module AnM75LCA12M
View Details
Transistor Optocoupler AOT110B with Local Gold-Plated Pins
View Details
N-Channel MOSFET Transistor AnR40N20
View Details
Miniature Silicon Epitaxial-Planar n-p-n Transistor 2T368A9/PC
View Details
Power Switches K3003KI014A
View Details
Power IGBT Module AnM600SSC12M
View Details
Power Module AnM100HBA12M - High Efficiency Performance
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View Details
Powerful GaN-based Microwave Transistor PP9170G
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions